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|Section2= |Section3= }} Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuInxGa(1-x)Se2 where the value of x can vary from 1 (pure copper indium selenide) to 0 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with ''x'' from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide). ==Structure== CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure. Upon heating it transforms to the zincblende form and the transition temperature decreases from 1045 °C for x=0 to 805 °C for x=1.〔 抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「Copper indium gallium selenide」の詳細全文を読む スポンサード リンク
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